是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X25 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 16 weeks |
风险等级: | 5.53 | 外壳连接: | ISOLATED |
集电极-发射极最大电压: | 1200 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X25 | 元件数量: | 6 |
端子数量: | 25 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 490 ns | 标称接通时间 (ton): | 185 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS50R12N2T7_B15 | INFINEON |
获取价格 |
Solder pin | |
FS50R12W1T7 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FS50R12W1T7_B11 | INFINEON |
获取价格 |
PressFIT | |
FS50R12W2T4 | INFINEON |
获取价格 |
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
FS50R12W2T4_B11 | INFINEON |
获取价格 |
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FS50R12W2T4B11BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T4BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T7 | INFINEON |
获取价格 |
EasyPACK??2B 1200 V,?50 A 六单元?IGBT模块,采用TRENCH | |
FS50R12W2T7_B11 | INFINEON |
获取价格 |
PressFIT | |
FS50R17KE3_B17 | EUPEC |
获取价格 |
IGBT-modules |