是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X25 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 2.1 | Is Samacsys: | N |
其他特性: | UL APPROVED | 外壳连接: | ISOLATED |
集电极-发射极最大电压: | 1200 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X25 | 元件数量: | 6 |
端子数量: | 25 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 490 ns | 标称接通时间 (ton): | 185 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FS50R12KT4P_B11 | INFINEON |
获取价格 |
TIM | |
FS50R12KT4PB11BPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-25 | |
FS50R12N2T7_B15 | INFINEON |
获取价格 |
Solder pin | |
FS50R12W1T7 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, | |
FS50R12W1T7_B11 | INFINEON |
获取价格 |
PressFIT | |
FS50R12W2T4 | INFINEON |
获取价格 |
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
FS50R12W2T4_B11 | INFINEON |
获取价格 |
EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FS50R12W2T4B11BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T4BOMA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel, MODULE-33 | |
FS50R12W2T7 | INFINEON |
获取价格 |
EasyPACK??2B 1200 V,?50 A 六单元?IGBT模块,采用TRENCH |