5秒后页面跳转
FS50R07N2E4BOSA1 PDF预览

FS50R07N2E4BOSA1

更新时间: 2024-09-26 21:18:27
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
9页 664K
描述
Insulated Gate Bipolar Transistor

FS50R07N2E4BOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.57峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FS50R07N2E4BOSA1 数据手册

 浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第2页浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第3页浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第4页浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第5页浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第6页浏览型号FS50R07N2E4BOSA1的Datasheet PDF文件第7页 
TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FS50R07N2E4  
EconoPACK™2ꢀModulꢀmitꢀTrench/FeldstoppꢀIGBT4ꢀundꢀEmitterꢀControlledꢀ4ꢀDiodeꢀundꢀNTC  
EconoPACK™2ꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT4ꢀandꢀEmitterꢀControlledꢀ4ꢀdiodeꢀandꢀNTC  
VorläufigeꢀDatenꢀ/ꢀPreliminaryꢀData  
VCES = 650V  
IC nom = 50A / ICRM = 100A  
TypischeꢀAnwendungen  
TypicalꢀApplications  
• Motorantriebe  
• MotorꢀDrives  
ElektrischeꢀEigenschaften  
ElectricalꢀFeatures  
• ErhöhteꢀSperrspannungsfestigkeitꢀaufꢀ650V  
• Increasedꢀblockingꢀvoltageꢀcapabilityꢀtoꢀ650V  
Hohe Kurzschlussrobustheit, selbstlimitierender  
High Short Circuit Capability, Self Limiting Short  
Kurzschlussstrom  
CircuitꢀCurrent  
• TrenchꢀIGBTꢀ4  
• Tvjꢀopꢀ=ꢀ150°C  
• TrenchꢀIGBTꢀ4  
• Tvjꢀopꢀ=ꢀ150°C  
MechanischeꢀEigenschaften  
• IntegrierterꢀNTCꢀTemperaturꢀSensor  
• Kupferbodenplatte  
MechanicalꢀFeatures  
• IntegratedꢀNTCꢀtemperatureꢀsensor  
• CopperꢀBaseꢀPlate  
• Lötverbindungstechnik  
• Standardgehäuse  
• SolderꢀContactꢀTechnology  
• StandardꢀHousing  
ModuleꢀLabelꢀCode  
BarcodeꢀCodeꢀ128  
ContentꢀofꢀtheꢀCode  
ModuleꢀSerialꢀNumber  
ꢀDigit  
ꢀꢀ1ꢀ-ꢀꢀꢀ5  
ꢀꢀ6ꢀ-ꢀ11  
12ꢀ-ꢀ19  
20ꢀ-ꢀ21  
22ꢀ-ꢀ23  
ModuleꢀMaterialꢀNumber  
ProductionꢀOrderꢀNumber  
Datecodeꢀ(ProductionꢀYear)  
Datecodeꢀ(ProductionꢀWeek)  
DMXꢀ-ꢀCode  
preparedꢀby:ꢀAS  
approvedꢀby:ꢀRS  
dateꢀofꢀpublication:ꢀ2013-11-08  
revision:ꢀ2.0  
ULꢀapprovedꢀ(E83335)  
1

与FS50R07N2E4BOSA1相关器件

型号 品牌 获取价格 描述 数据表
FS50R07U1E4 INFINEON

获取价格

Insulated Gate Bipolar Transistor,
FS50R07U1E4BPSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor,
FS50R07W1E3_B11A INFINEON

获取价格

PressFIT
FS50R07W1E3B11ABOMA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT PACK
FS50R10KF2 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
FS50R12KE3 INFINEON

获取价格

Höchstzulässige Werte / maximum rated value
FS50R12KE3BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-28
FS50R12KF ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 50A I(C)
FS50R12KF2 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 50A I(C)
FS50R12KT3 INFINEON

获取价格

EconoPACK™2 1200 V, 50 A sixpack IGBT module