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FS50R12KE3 PDF预览

FS50R12KE3

更新时间: 2024-09-26 12:26:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管局域网
页数 文件大小 规格书
10页 185K
描述
Höchstzulässige Werte / maximum rated values

FS50R12KE3 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FS50R12KE3  
Höchstzulässige Werte / maximum rated values  
Elektrische Eigenschaften / electrical properties  
Kollektor Emitter Sperrspannung  
collector emitter voltage  
Tvj= 25°C  
VCES  
1200  
V
50  
75  
A
A
Kollektor Dauergleichstrom  
DC collector current  
Tc= 80°C  
Tc= 25°C  
IC, nom  
IC  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tp= 1ms, Tc= 80°C  
ICRM  
100  
270  
+20  
50  
A
W
V
Gesamt Verlustleistung  
total power dissipation  
Tc= 25°C; Transistor  
Ptot  
Gate Emitter Spitzenspannung  
gate emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
tp= 1ms  
IFRM  
100  
700  
2,5  
A
repetitive peak forward current  
Grenzlastintegral  
I²t value  
VR= 0V, tp= 10ms, Tvj= 125°C  
RMS, f= 50Hz, t= 1min.  
I²t  
A²s  
kV  
Isolations Prüfspannung  
insulation test voltage  
VISOL  
Charakteristische Werte / characteristic values  
Transistor Wechselrichter / transistor inverter  
min.  
-
typ.  
1,7  
2,0  
max.  
2,15  
-
IC= 50A, VGE= 15V, Tvj= 25°C  
V
V
Kollektor Emitter Sättigungsspannung  
VCEsat  
VGE(th)  
QG  
collector emitter saturation voltage  
IC= 50A, VGE= 15V, Tvj= 125°C  
-
Gate Schwellenspannung  
gate threshold voltage  
IC= 2,0mA, VCE= VGE, Tvj= 25°C  
5,0  
5,8  
0,47  
3,50  
0,13  
-
6,5  
V
Gateladung  
gate charge  
VGE= -15V...+15V  
µC  
nF  
nF  
mA  
nA  
-
-
-
-
-
-
-
Eingangskapazität  
input capacitance  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
-
Kollektor Emitter Reststrom  
collector emitter cut off current  
VCE= 1200V, VGE= 0V, Tvj= 25°C  
ICES  
5
Gate Emitter Reststrom  
gate emitter leakage current  
VCE= 0V, VGE= 20V, Tvj= 25°C  
IGES  
-
400  
prepared by: MOD-D2; M. Münzer  
approved: SM TM; Robert Severin  
date of publication: 2002-09-03  
revision: 3.0  
DB_FS50R12KE3_ 3.0.xls  
2002-09-03  
1 (8)  

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