Datasheet > FS50R12KT3_04

FS50R12KT3_04

更新时间： 2024-11-14 10:24:43

品牌	Logo	应用领域
EUPEC		二极管双极性晶体管
页数	文件大小	规格书
8页	308K
描述
EconoPACK2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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中文翻译

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FS50R12KT3_04 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FS50R12KT3

EconoPACK™2 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode

EconoPACK™2 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

100

280

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 50 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

1,70 2,15

1,90

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 2,00 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,0

5,8

0,47

4,0

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

3,50

0,13

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,09

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,03

0,05

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,42

0,52

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 50 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,07

0,09

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 50 A, V†Š = 600 V

V•Š = ±15 V, L» = 70 nH

R•ÓÒ = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓÒ

5,00

5,50

200

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 50 A, V†Š = 600 V

V•Š = ±15 V, L» = 70 nH

R•ÓËË = 18 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓËË

Kurzschlussverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

0,45 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌ†™

0,19

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Knecht

approved by: Robert Severin

date of publication: 2004-11-16

revision: 2.1

12 3 4 5 6 7 8

中文翻译

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