FQPF6N90C_NL

更新时间： 2024-09-16 13:07:51

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飞兆/仙童 - FAIRCHILD		/
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FQPF6N90C_NL 数据手册

FQPF6N90

900V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

3.4A, 900V, R

= 1.9Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 40 nC)

Low Crss ( typical 17 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

TO-220F

FQPF Series

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF6N90

900

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

3.4

- Continuous (T = 100°C)

2.1

(Note 1)

Drain Current

- Pulsed

13.6

± 30

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

710

3.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.6

V/ns

dv/dt

4.0

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.45

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.25

62.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

Rev. B, December 2002

12 3 4 5 6 7 8

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