Datasheet > FQPF85N06

FQPF85N06

更新时间： 2024-11-10 11:16:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	577K
描述
功率 MOSFET，N 沟道，QFET®，60 V，53 A，10 mΩ，TO-220F

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQPF85N06 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

12 3 4 5 6 7...10

中文翻译

下载PDF

与FQPF85N06相关器件

型号	品牌	获取价格	描述	数据表
FQPF8N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQPF8N60C	KERSEMI	获取价格	600V N-Channel MOSFET
FQPF8N60C	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，7.5 A，1.2 Ω，TO-220
FQPF8N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQPF8N60CF	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQPF8N60CFT	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQPF8N60CFT	ONSEMI	获取价格	N 沟道 QFET® FRFET® MOSFET 600V, 6.26A, 1.5Ω
FQPF8N60CT_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FQPF8N60CYDTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FQPF8N80C	FAIRCHILD	获取价格	800V N-Channel MOSFET

与FQPF85N06相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

FQPF85N06

FQPF85N06 数据手册

与FQPF85N06相关器件

与FQPF85N06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FQPF85N06

FQPF85N06 数据手册

与FQPF85N06相关器件

与FQPF85N06相关文章

您还可以找

您在本页遇到什么问题？