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FQPF9N25C PDF预览

FQPF9N25C

更新时间： 2024-11-10 11:11:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 545K
描述
功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-220F

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中文翻译

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FQPF9N25C 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.27
雪崩能效等级（Eas）：285 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：8.8 A最大漏极电流 (ID)：8.8 A
最大漏源导通电阻：0.43 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：38 W最大脉冲漏极电流 (IDM)：35.2 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Matte Tin (Sn) - annealed
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQPF9N25C 数据手册

 浏览型号FQPF9N25C的Datasheet PDF文件第2页浏览型号FQPF9N25C的Datasheet PDF文件第3页浏览型号FQPF9N25C的Datasheet PDF文件第4页浏览型号FQPF9N25C的Datasheet PDF文件第5页浏览型号FQPF9N25C的Datasheet PDF文件第6页浏览型号FQPF9N25C的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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FQPF9N25C 替代型号

型号 品牌 替代类型 描述 数据表
FQPF9N25 FAIRCHILD

功能相似

 250V N-Channel MOSFET
FQPF9N25C FAIRCHILD

功能相似

 250V N-Channel MOSFET

与FQPF9N25C相关器件

型号 品牌 获取价格 描述 数据表
FQPF9N25CT ROCHESTER

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 		8.8A, 250V, 0.43ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
FQPF9N25CT ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-22
FQPF9N25CYDTU ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，250 V，8.8 A，430 mΩ，TO-22
FQPF9N30 FAIRCHILD

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 		300V N-Channel MOSFET
FQPF9N50 FAIRCHILD

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 		500V N-Channel MOSFET
FQPF9N50C FAIRCHILD

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 		500V N-Channel MOSFET
FQPF9N50C ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，500 V，9 A，800 mΩ，TO-220F
FQPF9N50CF FAIRCHILD

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 		500V N-Channel MOSFET
FQPF9N50CF ONSEMI

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 		功率 MOSFET，N 沟道，QFET®，FRFET®，500 V，9 A，800 mΩ，
FQPF9N50CT FAIRCHILD

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 		500V N-Channel MOSFET

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