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FQPF70N10 PDF预览

FQPF70N10

更新时间: 2024-11-20 22:07:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 627K
描述
100V N-Channel MOSFET

FQPF70N10 数据手册

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August 2000  
TM  
QFET  
FQPF70N10  
100V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
35A, 100V, R  
= 0.023@V = 10 V  
DS(on) GS  
Low gate charge ( typical 85 nC)  
Low Crss ( typical 150 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
"
! "  
"
!
G
"
G D  
S
TO-220F  
FQPF Series  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF70N10  
100  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
35  
A
D
C
- Continuous (T = 100°C)  
24.7  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
140  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
1300  
35  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
6.2  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
P
Power Dissipation (T = 25°C)  
62  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.41  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.42  
62.5  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2000 Fairchild Semiconductor International  
Rev. B, August 2000  

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