5秒后页面跳转
FQPF7N10 PDF预览

FQPF7N10

更新时间: 2024-09-15 22:23:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 550K
描述
100V N-Channel MOSFET

FQPF7N10 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.63
雪崩能效等级(Eas):50 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):23 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQPF7N10 数据手册

 浏览型号FQPF7N10的Datasheet PDF文件第2页浏览型号FQPF7N10的Datasheet PDF文件第3页浏览型号FQPF7N10的Datasheet PDF文件第4页浏览型号FQPF7N10的Datasheet PDF文件第5页浏览型号FQPF7N10的Datasheet PDF文件第6页浏览型号FQPF7N10的Datasheet PDF文件第7页 
December 2000  
TM  
QFET  
FQPF7N10  
100V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
5.5A, 100V, R  
= 0.35@V = 10 V  
DS(on) GS  
Low gate charge ( typical 5.8 nC)  
Low Crss ( typical 10 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as audio  
amplifiers, high efficiency switching DC/DC converters, and  
DC motor control.  
175°C maximum junction temperature rating  
D
!
"
! "  
"
G !  
"
G D  
S
TO-220F  
FQPF Series  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF7N10  
Units  
V
V
I
Drain-Source Voltage  
100  
5.5  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
3.89  
22  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
50  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
5.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
2.3  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
P
Power Dissipation (T = 25°C)  
23  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.15  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
6.52  
62.5  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2000 Fairchild Semiconductor International  
Rev. A4, December 2000  

FQPF7N10 替代型号

型号 品牌 替代类型 描述 数据表
FQP17P06 ONSEMI

功能相似

功率 MOSFET,P 沟道,QFET®,-60 V,-17 A,120 mΩ,TO-22
STD60NF06T4 STMICROELECTRONICS

功能相似

N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET
STD6N95K5 STMICROELECTRONICS

功能相似

N-channel 950 V, 1 Ω typ., 9 A Zener-protect

与FQPF7N10相关器件

型号 品牌 获取价格 描述 数据表
FQPF7N10L FAIRCHILD

获取价格

100V LOGIC N-Channel MOSFET
FQPF7N10L ROCHESTER

获取价格

5.5A, 100V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN
FQPF7N20 FAIRCHILD

获取价格

200V N-Channel MOSFET
FQPF7N20L FAIRCHILD

获取价格

200V LOGIC N-Channel MOSFET
FQPF7N30 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 4.9A I(D) | TO-220F
FQPF7N40 FAIRCHILD

获取价格

400V N-Channel MOSFET
FQPF7N60 FAIRCHILD

获取价格

600V N-Channel MOSFET
FQPF7N60 KERSEMI

获取价格

600V N-Channel MOSFET
FQPF7N60 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,600 V,7.4 A,1 Ω,TO-220F
FQPF7N65C FAIRCHILD

获取价格

650V N-Channel MOSFET