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FQPF70N10_NL PDF预览

FQPF70N10_NL

更新时间: 2024-11-25 13:07:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 627K
描述
Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN

FQPF70N10_NL 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):1300 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):35 A
最大漏源导通电阻:0.023 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):140 A认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQPF70N10_NL 数据手册

 浏览型号FQPF70N10_NL的Datasheet PDF文件第2页浏览型号FQPF70N10_NL的Datasheet PDF文件第3页浏览型号FQPF70N10_NL的Datasheet PDF文件第4页浏览型号FQPF70N10_NL的Datasheet PDF文件第5页浏览型号FQPF70N10_NL的Datasheet PDF文件第6页浏览型号FQPF70N10_NL的Datasheet PDF文件第7页 
August 2000  
TM  
QFET  
FQPF70N10  
100V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
35A, 100V, R  
= 0.023@V = 10 V  
DS(on) GS  
Low gate charge ( typical 85 nC)  
Low Crss ( typical 150 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
"
! "  
"
!
G
"
G D  
S
TO-220F  
FQPF Series  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF70N10  
100  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
35  
A
D
C
- Continuous (T = 100°C)  
24.7  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
140  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
1300  
35  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
6.2  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
P
Power Dissipation (T = 25°C)  
62  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.41  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.42  
62.5  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2000 Fairchild Semiconductor International  
Rev. B, August 2000  

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