December 2000
TM
QFET
FQB28N15 / FQI28N15
150V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
•
•
•
•
•
•
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28A, 150V, R
= 0.09Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 40 nC)
Low Crss ( typical 50 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifiers, high efficiency switching for DC/DC converters,
DC motor control, and uninterrupted power supplies.
175°C maximum junction temperature rating
D
!
D
"
! "
"
!
G
"
G
S
D2-PAK
FQB Series
I2-PAK
FQI Series
G
D
S
!
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQB28N15 / FQI28N15
Units
V
V
I
Drain-Source Voltage
150
28
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
19.8
112
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 25
300
V
GSS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
28
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
16.8
5.5
mJ
V/ns
W
AR
dv/dt
Power Dissipation (T = 25°C) *
3.75
168
P
A
D
Power Dissipation (T = 25°C)
W
C
- Derate above 25°C
Operating and Storage Temperature Range
1.12
-55 to +175
W/°C
°C
T , T
J
STG
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
0.89
40
Units
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
θJC
θJA
θJA
--
--
62.5
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A2, December 2000