Datasheet > FQA44N10100

FQA44N10100

更新时间： 2024-09-14 22:15:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	573K
描述
100V N-Channel MOSFET

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数据手册

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FQA44N10100 数据手册

December 2000

QFET

FQA44N10

100V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

48A, 100V, R

= 0.039Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 48 nC)

Low Crss ( typical 85 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as audio

amplifiers, high efficiency switching DC/DC converters, and

DC motor control.

175°C maximum junction temperature rating

! "

TO-3P

FQA Series

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQA44N10

Units

Drain-Source Voltage

100

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

192

Gate-Source Voltage

± 25

530

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C)

180

- Derate above 25°C

Operating and Storage Temperature Range

1.2

W/°C

°C

T , T

-55 to +175

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.83

Units

°C/W

θJC

θCS

θJA

0.24

Rev. A2, December 2000

12 3 4 5 6 7 8

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