Datasheet > FQA46N15_07

FQA46N15_07

更新时间： 2024-11-05 03:00:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	782K
描述
150V N-Channel MOSFET

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FQA46N15_07 数据手册

August 2007

QFET

FQA46N15 / FQA46N15_F109

150V N-Channel MOSFET

Features

Description

•

50A, 150V, R_DS(on)= 0.042Ω @V_GS= 10 V

Low gate charge ( typical 85 nC)

Low Crss ( typical 100pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQA46N15

Units

V_DSS

I_D

Drain-Source Voltage

150

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

35.3

200

(Note 1)

I_DM

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 25

650

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

V/ns

6.0

250

- Derate above 25°C

1.67

-55 to +175

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.6

Units

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

FQA46N15 / FQA46N15_F109 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...9

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与FQA46N15_07相关器件

型号	品牌	获取价格	描述	数据表
FQA46N15_F109	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQA46N15_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 50A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
FQA47P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQA48N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQA55N10	FAIRCHILD	获取价格	100V N-Channel MOSFET
FQA55N25	FAIRCHILD	获取价格	250V N-Channel MOSFET
FQA55N25	ONSEMI	获取价格	功率 MOSFET、N 沟道，QFET®，250 V，55 A，40 mΩ，TO-3P
FQA55N25_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 55A I(D), 250V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
FQA58N08	FAIRCHILD	获取价格	80V N-Channel MOSFET
FQA5N90	FAIRCHILD	获取价格	900V N-Channel MOSFET