FQA62N25C_NL

更新时间： 2024-09-15 13:00:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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FQA62N25C_NL 数据手册

QFET^®

FQA62N25C

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

Features

•

62A, 250V, R_DS(on)= 0.035Ω @V_GS= 10 V

Low gate charge ( typical 100 nC)

Low Crss ( typical 63.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

{

●

◀

▲

●

G^{

{

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQA62N25C

250

Units

Drain-Source Voltage

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

248

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

I_AR

E_AR

dv/dt

P_D

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

± 30

2300

29.8

5.5

V/ns

(Note 2)

(Note 1)

(Note 3)

298

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

2.38

-55 to +150

W/°C

°C

T_J, T_STG

T_L

300

°C

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.42

Units

°C/W

R_θJC

R_θCS

R_θJA

0.24

Rev. A, March 2004

12 3 4 5 6 7 8

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