Datasheet > FQA7N80C_06

FQA7N80C_06

更新时间： 2024-11-06 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	792K
描述
800V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQA7N80C_06 数据手册

September 2006

QFET

FQA7N80C

800V N-Channel MOSFET

Features

Description

•

7.0A, 800V, R_DS(on)= 1.9Ω @V_GS= 10 V

Low gate charge ( typical 27 nC)

Low Crss ( typical 10pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

TO-3P

FQA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQA7N80C

Units

V_DSS

I_D

Drain-Source Voltage

800

7.0

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

4.4

(Note 1)

I_DM

Drain Current

28.0

± 30

580

V_GSS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

7.0

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

V/ns

4.0

198

- Derate above 25°C

1.75

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.63

Units

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

FQA7N80C Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQA7N80C_06相关器件

型号	品牌	获取价格	描述	数据表
FQA7N80C_07	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQA7N80C_F109	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQA7N80C-F109	ONSEMI	获取价格	N 沟道 QFET® MOSFET 800V, 7.0A, 1.9Ω
FQA7N90	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA7N90M	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA7N90M_06	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA7N90M_F109	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA85N06	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQA8N100C	FAIRCHILD	获取价格	1000V N-Channel MOSFET
FQA8N100C	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，1000 V，8.0 A，1.45 Ω，TO-3