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FQA90N15_F109 PDF预览

FQA90N15_F109

更新时间: 2024-11-05 03:37:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 1108K
描述
N-Channel Power MOSFET

FQA90N15_F109 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.69
Is Samacsys:N雪崩能效等级(Eas):1400 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):90 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):375 W
最大脉冲漏极电流 (IDM):360 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQA90N15_F109 数据手册

 浏览型号FQA90N15_F109的Datasheet PDF文件第2页浏览型号FQA90N15_F109的Datasheet PDF文件第3页浏览型号FQA90N15_F109的Datasheet PDF文件第4页浏览型号FQA90N15_F109的Datasheet PDF文件第5页浏览型号FQA90N15_F109的Datasheet PDF文件第6页浏览型号FQA90N15_F109的Datasheet PDF文件第7页 
October 2006  
®
QFET  
FQH90N15 / FQA90N15  
N-Channel Power MOSFET  
Features  
Description  
90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V  
Low gate charge (typical 220 nC)  
Low Crss (typical 200 pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for low  
voltage applications such as audio amplifire, high efficiency  
switching for DC/DC converters, and DC motor control,  
uninterrupted power supply.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
{
z
z
z
G
{
TO-247  
TO-3P  
G
{
FQH Series  
D
FQA Series  
S
G D S  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FQH90N15/FQA90N15  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
150  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
90  
63.5  
A
A
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
360  
±25  
1400  
90  
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
37.5  
6.0  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
- Derate above 25°C  
375  
2.5  
W
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Min.  
--  
Max.  
0.4  
--  
Unit  
°C/W  
°C/W  
°C/W  
RθJC  
RθCS  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
0.24  
--  
Thermal Resistance, Junction-to-Ambient  
40  
©2006 Fairchild Semiconductor Corporation  
FQH90N15 / FQA90N15 Rev. C  
1
www.fairchildsemi.com  

FQA90N15_F109 替代型号

型号 品牌 替代类型 描述 数据表
FQA90N15 FAIRCHILD

类似代替

N-Channel Power MOSFET
FQH90N15 FAIRCHILD

功能相似

N-Channel Power MOSFET

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