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FQA9P25 PDF预览

FQA9P25

更新时间: 2024-11-10 11:09:31
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 716K
描述
功率 MOSFET,P 沟道,QFET®,-250V,-10.5A,620 mΩ

FQA9P25 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1.53
雪崩能效等级(Eas):650 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):10.5 A
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.62 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQA9P25 数据手册

 浏览型号FQA9P25的Datasheet PDF文件第2页浏览型号FQA9P25的Datasheet PDF文件第3页浏览型号FQA9P25的Datasheet PDF文件第4页浏览型号FQA9P25的Datasheet PDF文件第5页浏览型号FQA9P25的Datasheet PDF文件第6页浏览型号FQA9P25的Datasheet PDF文件第7页 
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