September 2006
®
QFET
FQA8N80C
800V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
Low gate charge ( typical 35 nC)
Low Crss ( typical 13pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3P
FQA Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
FQA8N80C
Units
V
VDSS
ID
Drain-Source Voltage
800
8.4
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
A
5.3
A
(Note 1)
IDM
Drain Current
33.6
± 30
850
A
VGSS
EAS
IAR
Gate-Source Voltage
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
8.4
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
22
mJ
V/ns
W
4.0
220
- Derate above 25°C
1.75
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
0.57
--
Units
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
0.24
--
Thermal Resistance, Junction-to-Ambient
40
©2006 Fairchild Semiconductor Corporation
FQA8N80C Rev. A1
1
www.fairchildsemi.com