Datasheet > FQA7N90

FQA7N90

更新时间： 2024-11-05 22:23:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	676K
描述
900V N-Channel MOSFET

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数据手册
替代型号

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FQA7N90 数据手册

March 2001

QFET

FQA7N90

900V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

•

7.4A, 900V, R

= 1.55Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 45 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-3P

FQA Series

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQA7N90

900

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

7.4

- Continuous (T = 100°C)

4.7

(Note 1)

Drain Current

- Pulsed

29.6

± 30

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

830

7.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

4.0

Power Dissipation (T = 25°C)

220

- Derate above 25°C

Operating and Storage Temperature Range

1.75

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

0.57

Units

°C/W

θJC

θCS

θJA

0.24

Rev. A, March 2001

12 3 4 5 6 7 8

中文翻译

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FQA7N90 替代型号

型号	品牌	替代类型	描述	数据表
STD60NF06T4	STMICROELECTRONICS	功能相似	N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET
STD18N55M5	STMICROELECTRONICS	功能相似	N-channel 550 V, 0.18 Î©, 13 A, MDmeshâ¢ V P
STW12NK90Z	STMICROELECTRONICS	功能相似	N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET

与FQA7N90相关器件

型号	品牌	获取价格	描述	数据表
FQA7N90M	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA7N90M_06	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA7N90M_F109	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQA85N06	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQA8N100C	FAIRCHILD	获取价格	1000V N-Channel MOSFET
FQA8N100C	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，1000 V，8.0 A，1.45 Ω，TO-3
FQA8N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQA8N80_06	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQA8N80_F109	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQA8N80C	FAIRCHILD	获取价格	800V N-Channel MOSFET