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FQA58N08 PDF预览

FQA58N08

更新时间: 2024-09-14 22:17:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 623K
描述
80V N-Channel MOSFET

FQA58N08 数据手册

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December 2000  
TM  
QFET  
FQA58N08  
80V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
64A, 80V, R  
= 0.024@V = 10 V  
DS(on) GS  
Low gate charge ( typical 50 nC)  
Low Crss ( typical 120 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
high efficiency switching for DC/DC converters, and DC  
motor control.  
175°C maximum junction temperature rating  
D
!
"
! "  
"
!
G
"
TO-3P  
FQA Series  
!
S
G
D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQA58N08  
Units  
V
V
I
Drain-Source Voltage  
80  
64  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
45.2  
256  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
560  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
64  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
18  
mJ  
V/ns  
W
AR  
dv/dt  
6.5  
P
Power Dissipation (T = 25°C)  
180  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.2  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
0.83  
--  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
θJC  
θCS  
θJA  
0.24  
--  
40  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

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