December 2000
TM
QFET
FQA58N08
80V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
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64A, 80V, R
= 0.024Ω @V = 10 V
DS(on) GS
Low gate charge ( typical 50 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.
175°C maximum junction temperature rating
D
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!
G
"
TO-3P
FQA Series
!
S
G
D S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Parameter
FQA58N08
Units
V
V
I
Drain-Source Voltage
80
64
DSS
- Continuous (T = 25°C)
Drain Current
A
D
C
- Continuous (T = 100°C)
45.2
256
A
C
I
(Note 1)
Drain Current
- Pulsed
A
DM
V
E
I
Gate-Source Voltage
± 25
560
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
64
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
18
mJ
V/ns
W
AR
dv/dt
6.5
P
Power Dissipation (T = 25°C)
180
D
C
- Derate above 25°C
Operating and Storage Temperature Range
1.2
W/°C
°C
T , T
-55 to +175
J
STG
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
T
300
°C
L
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
Max
0.83
--
Units
°C/W
°C/W
°C/W
R
R
R
θJC
θCS
θJA
0.24
--
40
©2000 Fairchild Semiconductor International
Rev. A2, December 2000