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FDS9934C

更新时间: 2024-11-23 22:22:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
8页 159K
描述
Dual N- and P-Channel enhancement mode power field effect transistors

FDS9934C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.33
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):6.5 A最大漏极电流 (ID):6.5 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS9934C 数据手册

 浏览型号FDS9934C的Datasheet PDF文件第2页浏览型号FDS9934C的Datasheet PDF文件第3页浏览型号FDS9934C的Datasheet PDF文件第4页浏览型号FDS9934C的Datasheet PDF文件第5页浏览型号FDS9934C的Datasheet PDF文件第6页浏览型号FDS9934C的Datasheet PDF文件第7页 
February 2004  
FDS9934C  
Complementary  
Features  
These dual N- and P-Channel enhancement mode  
power field effect transistors are produced using  
Fairchild Semiconductor’s advanced PowerTrench  
process that has been especially tailored to minimize  
on-state ressitance and yet maintain superior switching  
performance.  
·
Q1: 6.5 A, 20 V. RDS(ON) = 30 mW @ VGS = 4.5 V  
RDS(ON) = 43 mW @ VGS = 2.5 V.  
·
Q2: –5 A, –20 V,RDS(ON) = 55 mW @ VGS = –4.5 V  
RDS(ON) = 90 mW @ VGS = –2.5 V  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
Q2  
D2  
5
6
7
8
4
3
2
1
D2  
D1  
D1  
Q1  
G2  
SO-8  
S2  
G1  
S1  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
Q1  
20  
Q2  
–20  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
V
V
A
±12  
–5  
±10  
6.5  
20  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–30  
PD  
W
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
1
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS9934C  
FDS9934C  
13’’  
12mm  
2500 units  
FDS9934C Rev C(W)  
Ó2004 Fairchild Semiconductor Corporation  

FDS9934C 替代型号

型号 品牌 替代类型 描述 数据表
FDS9934C ONSEMI

类似代替

互补,PowerTrench® MOSFET,20V
NDS8928 FAIRCHILD

类似代替

Dual N & P-Channel Enhancement Mode Field Effect Transistor
IRF7307PBF INFINEON

功能相似

HEXFET POWER MOSFET

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