FDS9936

更新时间： 2024-11-23 22:22:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	418K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS9936 数据手册

May 1998

FDS9936A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to provide superior switching

performance and minimize on-state resistance. These devices

are particularly suited for low voltage applications such as disk

drive motor control, battery powered circuits where fast

switching, low in-line power loss, and resistance to transients

are needed.

5.5 A, 30 V. R_DS(ON)= 0.040 W @ V_GS= 10 V,

R_DS(ON)= 0.060 W @ V_GS= 4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package

SuperSOT^TM-6

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

SOT-223

SO-8

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

FDS9936A

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

5.5

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1b)

(Note 1c)

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDS9936A Rev.B

12 3 4 5 6 7 8

中文翻译

下载PDF

与FDS9936相关器件

型号	品牌	获取价格	描述	数据表
FDS9936A	FAIRCHILD	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
FDS9936AD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Met
FDS9936AL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Met
FDS9936AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 30V, 0.04ohm, 2-Element, N-Channel, Silicon, Met
FDS9945	FAIRCHILD	获取价格	60V N-Channel PowerTrench MOSFET
FDS9945	ONSEMI	获取价格	N 沟道，Power Trench® MOSFET，60V，3.5A，100mΩ
FDS9945_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
FDS9945F011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
FDS9945L86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 3.5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal
FDS9953A	FAIRCHILD	获取价格	Dual 30V P-Channel PowerTrench MOSFET