Datasheet > FDS9953AL86Z

FDS9953AL86Z

更新时间： 2024-10-03 08:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	242K
描述
Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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FDS9953AL86Z 数据手册

May 2001

FDS9953A

Dual 30V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

· –2.9 A, –30 V

R_DS(ON)= 130 mW @ V_GS= –10 V

R_DS(ON)= 200 mW @ V_GS= –4.5 V

· Low gate charge (2.5nC typical)

· Fast switching speed

Applications

Power management

Load switch

· High performance trench technology for extremely

low R_DS(ON)

Battery protection

· High power and current handling capability

SO-8

G2 S

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–30

±25

V_GSS

I_D

Gate-Source Voltage

±2.9

Drain Current – Continuous

– Pulsed

(Note 1a)

±10

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9953A

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

FDS9953A Rev B(W)

12 3 4 5 6 7...9

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