SEMICONDUCTOR
FDS99S
TECHNICAL DATA
Dual Series Switching Diode
3
•
We declare that the material of product
compliance with RoHS requirements.
1
DEVICE MARKING ORDERING INFORMATION
2
Device
Marking
A7
Shipping
SOT–23
FDS99S
FDS99S3
3000 Tape & Reel
10000 Tape & Reel
.
2
1
A7
CATHODE
ANODE
3
CAHODE/ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
V R
Value
70
Unit
Reverse Voltage
Vdc
mAdc
mAdc
V
Forward Current
I F
215
500
70
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 µ s
I FM(surge)
V RRM
I F(AV)
715
450
mA
I FRM
I FSM
mA
A
2.0
1.0
0.5
t = 1.0 ms
t = 1.0 S
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P D
225
mW
FR–5 Board, (1) T A = 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
R θJA
P D
556
300
°C/W
mW
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
°C
T J , T stg
–65 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I(BR) = 100 µA)
Reverse Voltage Leakage Current (V R = 70 Vdc)
(V R = 25 Vdc, T J = 150°C)
(V R = 70 Vdc, T J = 150°C)
Diode Capacitance
V (BR)
I R
70
—
––
––
—
2.5
30
50
Vdc
µAdc
C D
V F
—
1.5
pF
(V R = 0, f = 1.0 MHz)
Forward Voltage (I F = 1.0 mAdc)
(I F = 10 mAdc)
––
—
––
––
715
855
mVdc
(I F = 50 mAdc)
1000
1250
(I F = 150 mAdc)
Reverse Recovery Time
t rr
—
—
6.0
ns
V
(I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1)
Forward Recovery Voltage
(I F = 10 mA, t r = 20 ns)
V FR
1.75
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2008. 10. 30
Revision No : 0
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