Datasheet > FDS9958F085

FDS9958F085

更新时间： 2024-11-24 12:04:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	555K
描述
Dual P-Channel PowerTrenchÂ® MOSFET

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FDS9958F085 数据手册

November 2008

FDS9958_F085

Dual P-Channel PowerTrench^®MOSFET

-60V, -2.9A, 105mΩ

Features

General Description

Max r_DS(on)=105mΩ at V_GS= -10V, I_D= -2.9A

Max r_DS(on)=135mΩ at V_GS= -4.5V, I_D= -2.5A

These P-channel logic level specified MOSFETs are produced

using Fairchild Semiconductor’s advanced PowerTrench^®

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for superior

switching performance.

Qualified to AEC Q101

RoHS Compliant

These devices are well suited for portable electronics

applications: load switching and power management, battery

charging and protection circuits.

Applications

Load Switch

Power Management

Pin 1

SO-8

MOSFET Maximum Ratings ^T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

-60

±20

(Note 1a)

(Note 3)

-2.9

I_D

-12

E_AS

Single Pulse Avalanche Energy

Power Dissipation for Dual Operation

Power Dissipation

1.6

P_D

(Note 1a)

(Note 1b)

Power Dissipation

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12mm

Quantity

FDS9958

SO-8

330mm

2500units

FDS9958_F085

FDS9958_F085 Rev.A

www.fairchildsemi.com

12 3 4 5 6

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