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FDS9945

更新时间： 2024-11-25 11:13:15
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
7页 186K
描述
N 沟道，Power Trench® MOSFET，60V，3.5A，100mΩ

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中文翻译

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FDS9945 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
Samacsys Confidence：2Samacsys Status：Released
Samacsys PartID：1034797Samacsys Pin Count：8
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Small Outline Packages
Samacsys Footprint Name：SOIC-8 NB CASE 751-07 ISSUE AKSamacsys Released Date：2018-02-22 15:09:03
Is Samacsys：N配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDS9945 数据手册

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