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FDS9953A

更新时间： 2024-11-25 11:14:51
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 186K
描述
双 P 沟道，Power Trench® MOSFET，30V，-2.9A，130mΩ

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中文翻译

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FDS9953A 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.95Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：167248
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：SO 8L NB (SOIC)
Samacsys Released Date：2015-04-17 13:37:03Is Samacsys：N
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：2.9 A最大漏极电流 (ID)：2.9 A
最大漏源导通电阻：0.13 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：10 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDS9953A 数据手册

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中文翻译

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FDS9953A 替代型号

型号 品牌 替代类型 描述 数据表
FDS9953A FAIRCHILD

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 Dual 30V P-Channel PowerTrench MOSFET

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