FDS9934C_NL

更新时间： 2024-11-24 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲光电二极管 PC
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8页	159K
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数据手册

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FDS9934C_NL 数据手册

February 2004

FDS9934C

Complementary

Features

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

Q1: 6.5 A, 20 V. R_DS(ON)= 30 mW @ V_GS= 4.5 V

R_DS(ON)= 43 mW @ V_GS= 2.5 V.

Q2: –5 A, –20 V,R_DS(ON)= 55 mW @ V_GS= –4.5 V

R_DS(ON)= 90 mW @ V_GS= –2.5 V

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

–20

V_DSS

V_GSS

I_D

Drain-Source Voltage

±12

–5

±10

6.5

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

–30

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9934C

13’’

12mm

2500 units

FDS9934C Rev C(W)

Ó2004 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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