NDS8928

更新时间： 2024-10-01 22:45:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管开关光电二极管
页数	文件大小	规格书
13页	355K
描述
Dual N & P-Channel Enhancement Mode Field Effect Transistor

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替代型号

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NDS8928 数据手册

July 1996

NDS8928

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These dual N- and P -Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance and provide superior switching performance. These

devices are particularly suited for low voltage applications such

as notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

N-Channel 5.5A, 20V, R_DS(ON)=0.035W @ V_GS=4.5V

_DS(ON)=0.045W @ V_GS=2.7V

P-Channel -3.8A, -20V, R_DS(ON)=0.07W @ V_GS=-4.5V

_DS(ON)=0.1W @ V_GS=-2.7V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

N-Channel

P-Channel

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

-20

-8

(Note 1a)

5.5

-3.8

-15

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

NDS8928 Rev.D

12 3 4 5 6 7...13

中文翻译

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NDS8928 替代型号

型号	品牌	替代类型	描述	数据表
FDS9934C	ONSEMI	类似代替	互补，PowerTrench® MOSFET，20V
FDS9934C	FAIRCHILD	类似代替	Dual N- and P-Channel enhancement mode power field effect transistors
IRF7307PBF	INFINEON	功能相似	HEXFET POWER MOSFET

与NDS8928相关器件

型号	品牌	获取价格	描述	数据表
NDS8928/D84Z	TI	获取价格	5500mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS8928/L86Z	TI	获取价格	5500mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS8928/L99Z	TI	获取价格	5500mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS8928D84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel and P-Channe
NDS8928F011	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel and P-Channe
NDS8928L86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel and P-Channe
NDS8928S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5.5A I(D), 20V, 0.035ohm, 2-Element, N-Channel and P-Channe
NDS8934	FAIRCHILD	获取价格	Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8934/D84Z	TI	获取价格	3800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS8934/L86Z	TI	获取价格	3800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

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