生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 3.8 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDS8934L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Met | |
NDS8934L99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Met | |
NDS8934S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Met | |
NDS8936 | FAIRCHILD |
获取价格 |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
NDS8936/D84Z | TI |
获取价格 |
5.3A, 30V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS8936/L86Z | TI |
获取价格 |
5.3A, 30V, 0.035ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS8936/L99Z | TI |
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5300mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS8936/S62Z | TI |
获取价格 |
5300mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS8936_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Me | |
NDS8947 | FAIRCHILD |
获取价格 |
Dual P-Channel Enhancement Mode Field Effect Transistor |