5秒后页面跳转
NDS9400 PDF预览

NDS9400

更新时间: 2024-09-26 22:45:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管光电二极管
页数 文件大小 规格书
10页 330K
描述
Single P-Channel Enhancement Mode Field Effect Transistor

NDS9400 数据手册

 浏览型号NDS9400的Datasheet PDF文件第2页浏览型号NDS9400的Datasheet PDF文件第3页浏览型号NDS9400的Datasheet PDF文件第4页浏览型号NDS9400的Datasheet PDF文件第5页浏览型号NDS9400的Datasheet PDF文件第6页浏览型号NDS9400的Datasheet PDF文件第7页 
February 1996  
NDS9400A  
Single P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
-3.4A, -30V. RDS(ON) = 0.13W @ VGS = -10V.  
High density cell design for extremely low RDS(ON)  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high cell  
density, DMOS technology. This very high density process is  
especially tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high energy  
pulses in the avalanche and commutation modes. These  
devices are particularly suited for low voltage applications such  
as notebook computer power management and other battery  
powered circuits where fast switching, low in-line power loss,  
and resistance to transients are needed.  
.
High power and current handling capability in a widely used  
surface mount package.  
Rugged and reliable.  
________________________________________________________________________________  
5
4
3
2
1
6
7
8
Absolute Maximum Ratings  
TA= 25°C unless otherwise noted  
Symbol Parameter  
NDS9400A  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
V
V
A
VDSS  
VGSS  
ID  
± 20  
(Note 1a)  
± 3.4  
± 10  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
1.2  
W
1
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
50  
25  
°C/W  
°C/W  
R
JA  
q
Thermal Resistance, Junction-to-Case  
(Note 1)  
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDS9400A.SAM  

NDS9400 替代型号

型号 品牌 替代类型 描述 数据表
SI4403CDY-T1-GE3 VISHAY

功能相似

Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Meta

与NDS9400相关器件

型号 品牌 获取价格 描述 数据表
NDS9400/D84Z TI

获取价格

2.5A, 20V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET
NDS9400/L86Z TI

获取价格

2.5A, 20V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET
NDS9400A FAIRCHILD

获取价格

Single P-Channel Enhancement Mode Field Effect Transistor
NDS9400A TI

获取价格

3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9400A/D84Z TI

获取价格

3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9400A/L86Z TI

获取价格

3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9400A/L99Z TI

获取价格

3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9400A/S62Z TI

获取价格

3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9400A_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
NDS9400AD84Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal