Datasheet > NDS8963

NDS8963

更新时间： 2024-09-27 03:46:47

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体晶体管场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
2页	120K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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NDS8963 数据手册

September 1996

ADVANCE INFORMATION

NDS8963

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

2.5A, 30V. R_DS(ON)= 0.16W @ V_GS= 10V

R_DS(ON)= 0.25W @ V_GS= 4.5V.

SO-8 N-Channel enhancement mode power field

effect transistors are produced using National's

proprietary, high cell density, DMOS technology.

This very high density process is especially tailored

to minimize on-state resistance and provide superior

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a

widely used surface mount package.

switching

performance.

These

devices

are

Dual MOSFET in surface mount package.

particularly suited for low voltage applications such

as DC motor control and DC/DC conversion where

fast switching, low in-line power loss, and resistance

to transients are needed.

_______________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise note

Symbol Parameter

NDS8963

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

2.5

7.5

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation ^{(Note 1a)}

1.6

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_qJA

R_qJC

(Note 1)

NDS8963 Rev. A

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