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FDS7066SN3 PDF预览

FDS7066SN3

更新时间: 2024-09-15 22:21:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 189K
描述
30V N-Channel PowerTrench SyncFET⑩

FDS7066SN3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):19 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS7066SN3 数据手册

 浏览型号FDS7066SN3的Datasheet PDF文件第2页浏览型号FDS7066SN3的Datasheet PDF文件第3页浏览型号FDS7066SN3的Datasheet PDF文件第4页浏览型号FDS7066SN3的Datasheet PDF文件第5页浏览型号FDS7066SN3的Datasheet PDF文件第6页浏览型号FDS7066SN3的Datasheet PDF文件第7页 
January 2004  
FDS7066SN3  
30V N-Channel PowerTrench SyncFET™  
General Description  
Features  
The FDS7066SN3 is designed to replace a single SO-8  
FLMP MOSFET and Schottky diode in synchronous  
DC:DC power supplies. This 30V MOSFET is designed  
to maximize power conversion efficiency, providing a  
low RDS(ON) and low gate charge. The FDS7066SN3  
includes an integrated Schottky diode using Fairchild’s  
monolithic SyncFET technology. The performance of  
19 A, 30 V  
RDS(ON) = 5.5 m@ VGS = 10 V  
RDS(ON) = 6.0 m@ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON)  
the FDS7066SN3 as the low-side switch in  
a
High power and current handling capability  
Fast switching  
synchronous rectifier is close to the performance of the  
FDS7066N3 in parallel with a Schottky diode.  
Applications  
FLMP SO-8 package: Enhanced thermal  
performance in industry-standard package size  
DC/DC converter  
Motor drivesFeatures  
Bottom-side  
Drain Contact  
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±16  
19  
60  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
3.0  
1.7  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
40  
0.5  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS7066SN3  
FDS7066SN3  
13’’  
12mm  
2500 units  
FDS7066SN3 Rev C2 (W)  
2004 Fairchild Semiconductor Corporation  

FDS7066SN3 替代型号

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