Datasheet > FDS70S

FDS70S

更新时间： 2024-11-19 01:18:31

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	151K
描述
Monolithic Dual Switching Diode

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FDS70S 数据手册

SEMICONDUCTOR

FDS70S

TECHNICAL DATA

Monolithic Dual Switching Diode

Common Cathode

FETURE

•

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS (T_A= 25°C)

Rating

Reverse Voltage

Symbol

Max

Unit

SOT –23

V _R

I _F

Vdc

mAdc

Forward Current

200

500

Peak Forward Surge Current

THERMALCHARACTERISTICS

Characteristic

I_FM(surge)

Symbol

Max

Unit

Total Device Dissipation FR–5 Board⁽¹⁾

225

ANODE

T_A= 25°C

CATHODE

Derate above 25°C

1.8

556

300

mW/°C

°C/W

ANODE

Thermal Resistance, Junction to Ambient R_θJA

Total Device Dissipation

Alumina Substrate⁽²⁾T_A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

T_J,T_stg

–55 to +150

DEVICEMARKING

FDS70ST1G = A4

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFFCHARACTERISTICS

Reverse Breakdown Voltage

(I_(BR)= 100 µAdc)

V_(BR)

I_R

—

Vdc

Reverse Voltage Leakage Current

(V_R= 25 Vdc,T_J=150°C)

(V_R= 70 Vdc)

µAdc

—

2.5

100

(V_R= 70 Vdc,T_J=150°C)

Diode Capacitance

(V_R= 0, f = 1.0 MHz)

Forward Voltage

C_D

V_F

—

1.5

mVdc

(I_F= 1.0 mAdc)

—

715

855

(I_F= 10 mAdc)

(I_F= 50 mAdc)

1000

1250

(I_F= 150 mAdc)

Reverse Recovery Time

R_L=100Ω

t_rr

—

6.0

(I_F= I_R=10 mAdc, VR=5.0Vdc, I_R(REC)= 1.0 mAdc) (Figure 1)

1. FR–5 = 1.0 × 0.75 × 0.062 in.

2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.

ORDERING INFORMATION

Device

Marking

Shipping

FDS70ST1G

FDS70ST3G

3000 Tape & Reel

10000 Tape & Reel

2010. 5. 10

Revision No : 0

1/3

12 3

中文翻译

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