Datasheet > FDS7096N

FDS7096N

更新时间： 2024-11-17 22:40:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	171K
描述
30V N-Channel PowerTrench MOSFET

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FDS7096N 数据手册

January 2004

FDS7096N3



30V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 14 A, 30 V

R_DS(ON)

9 mΩ @ V_GS= 10 V

R_DS(ON)= 12 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• High power and current handling capability

• Fast switching

•

DC/DC converter

Power management

Load switch

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.0

1.5

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

0.5

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

12mm

Quantity

2500 units

FDS7096N3

13’’

FDS7096N3 Rev E2 (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6

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