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FDS7760A PDF预览

FDS7760A

更新时间: 2024-11-17 22:40:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 207K
描述
N-Channel Logic Level PowerTrench MOSFET

FDS7760A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.95
Samacsys Description:MOSFET N-Ch Logic Level配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):15 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.0055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS7760A 数据手册

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February 2000  
PRELIMINARY  
FDS7760A  
N-Channel Logic Level PowerTrench® MOSFET  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced  
15 A, 30 V. RDS(ON) = 5.5 m@ VGS = 10 V  
RDS(ON) = 8 m@ VGS = 4.5 V.  
using  
Fairchild  
Semiconductor’s  
advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain  
superior switching performance.  
Low gate charge (37nC typical)  
Fast switching speed.  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
High power and current handling capability.  
DC/DC converter  
Load switch  
Motor drives  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
30  
VGSS  
ID  
Gate-Source Voltage  
V
A
±20  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
15  
60  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
50  
50 (10 sec)  
30  
RθJA  
RθJA  
RθJC  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDS7760A  
FDS7760A  
13’’  
12mm  
2500 units  
FDS7760A Rev. B (W)  
1999 Fairchild Semiconductor Corporation  

FDS7760A 替代型号

型号 品牌 替代类型 描述 数据表
FDS6680A FAIRCHILD

类似代替

Single N-Channel, Logic Level, PowerTrench MOSFET
FDS6670A FAIRCHILD

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Single N-Channel, Logic Level, PowerTrenchTM MOSFET
BSO072N03S INFINEON

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OptiMOS2 Power-Transistor

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