是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 13.5 A | 最大漏极电流 (ID): | 13.5 A |
最大漏源导通电阻: | 0.0075 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS7764SD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
FDS7764SL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Meta | |
FDS7766 | FAIRCHILD |
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30V N-Channel PowerTrench MOSFET | |
FDS7766_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS7766D84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS7766S | FAIRCHILD |
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30V N-Channel PowerTrench MOSFET | |
FDS7766S62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS7779Z | FAIRCHILD |
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30 Volt P-Channel PowerTrench MOSFET | |
FDS7779Z | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C | |
FDS7779Z_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Me |