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FDS7764S_NL PDF预览

FDS7764S_NL

更新时间: 2024-11-18 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 277K
描述
Small Signal Field-Effect Transistor, 13.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS7764S_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.32
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):13.5 A最大漏极电流 (ID):13.5 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS7764S_NL 数据手册

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August 2000  
PRELIMINARY  
FDS7764A  
30V N-Channel PowerTrenchMOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS(ON) in a small package.  
15 A, 30 V.  
RDS(ON) = 7.5 m@ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON) High power and current handling  
capability  
Applications  
Synchronous Rectifier  
DC/DC converter  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
V
A
VGSS  
Gate-Source Voltage  
12  
15  
50  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
1.2  
1.0  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
50  
50 (10 sec)  
30  
RθJA  
RθJA  
RθJC  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS7764A  
FDS7764A  
13’’  
12mm  
2500 units  
FDS7764A Rev B1(W)  
2000 Fairchild Semiconductor Corporation  

FDS7764S_NL 替代型号

型号 品牌 替代类型 描述 数据表
FDS7764S FAIRCHILD

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