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FDS7096N3 PDF预览

FDS7096N3

更新时间: 2024-11-20 22:25:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 171K
描述
30V N-Channel PowerTrench MOSFET

FDS7096N3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.33
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS7096N3 数据手册

 浏览型号FDS7096N3的Datasheet PDF文件第2页浏览型号FDS7096N3的Datasheet PDF文件第3页浏览型号FDS7096N3的Datasheet PDF文件第4页浏览型号FDS7096N3的Datasheet PDF文件第5页浏览型号FDS7096N3的Datasheet PDF文件第6页 
January 2004  
FDS7096N3  
30V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS(ON) and fast switching speed.  
14 A, 30 V  
RDS(ON)  
=
9 m@ VGS = 10 V  
RDS(ON) = 12 m@ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
High power and current handling capability  
Fast switching  
DC/DC converter  
Power management  
Load switch  
FLMP SO-8 package: Enhanced thermal  
performance in industry-standard package size  
Bottom-side  
Drain Contact  
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
14  
60  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
3.0  
1.5  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
40  
0.5  
RθJA  
RθJC  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
12mm  
Quantity  
2500 units  
FDS7096N3  
FDS7096N3  
13’’  
FDS7096N3 Rev E2 (W)  
2004 Fairchild Semiconductor Corporation  

FDS7096N3 替代型号

型号 品牌 替代类型 描述 数据表
HAT2168H-EL-E RENESAS

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