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FDS6990AS_08 PDF预览

FDS6990AS_08

更新时间: 2024-11-18 04:18:39
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飞兆/仙童 - FAIRCHILD /
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8页 896K
描述
Dual 30V N-Channel PowerTrench SyncFET

FDS6990AS_08 数据手册

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May 2008  
FDS6990AS  
Dual 30V N-Channel PowerTrench® SyncFET™  
Features  
General Description  
7.5 A, 30 V.  
R
R
= 22 m@ V = 10 V  
The FDS6990AS is designed to replace a dual SO-8 MOSFET  
and two Schottky diodes in synchronous DC:DC power sup-  
plies. This 30V MOSFET is designed to maximize power con-  
DS(ON)  
DS(ON)  
GS  
= 28 m@ V = 4.5 V  
GS  
Includes SyncFET Schottky diode  
version efficiency, providing a low R  
and low gate charge.  
DS(ON)  
Low gate charge (10nC typical)  
Each MOSFET includes integrated Schottky diodes using Fair-  
child’s monolithic SyncFET technology. The performance of the  
FDS6990AS as the low-side switch in a synchronous rectifier is  
similar to the performance of the FDS6990A in parallel with a  
Schottky diode.  
High performance trench technology for extremely low  
R
DS(ON)  
High power and current handling capability  
Applications  
DC/DC converter  
Motor drives  
D1  
D1  
5
6
7
8
4
3
2
1
Q1  
Q2  
D2  
D2  
G1  
SO-8  
S1  
G2  
Pin 1  
S2  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
V
A
DSS  
V
20  
GSS  
I
Drain Current  
– Continuous  
– Pulsed  
(Note 1a)  
7.5  
D
20  
P
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
D
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
1
0.9  
T , T  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
J
STG  
Thermal Characteristics  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
40  
°C/W  
°C/W  
θJA  
θJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6990AS  
FDS6990AS  
13"  
12mm  
2500 units  
©2008 Fairchild Semiconductor Corporation  
FDS6990AS Rev. A1  
1
www.fairchildsemi.com  

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