FDS6993

更新时间： 2024-11-20 22:20:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管脉冲光电二极管
页数	文件大小	规格书
8页	160K
描述
Dual P-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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FDS6993 数据手册

June 2003

FDS6993

Dual P-Channel PowerTrench^ÒMOSFET

General Description

Features

Q1:

P-Channel

These P-Channel MOSFETs are made

using FSC’s PowerTrench^Òtechnology.

They are packaged in a single SO-8 which is

designed to allow two MOSFETs to operate

independenly, each with it’s own heat sink.

The combination of silicon and package

technologies results in minimum board

space and cost.

–4.3A, –30V R_DS(on)= 55mW @ V_GS= –10V

R_DS(on)= 85mW @ V_GS= –4.5V

Q2:

P-Channel

–6.8A, –12V R_DS(on)= 17mW @ V_GS= –4.5V

R_DS(on)= 24mW @ V_GS= –2.5V

R_DS(on)= 30mW @ V_GS= –1.8V

High power and handling capability in a widely

used surface mount package

SO-8

Pin 1

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

–30

±25

–4.3

–20

–12

±8

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

(Note 1a)

–6.8

–20

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.9

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_qJA

°C/W

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6993

13”

12mm

2500 units

FDS6993 Rev C (W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

中文翻译

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