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FDS7066N3 PDF预览

FDS7066N3

更新时间: 2024-11-17 22:19:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 193K
描述
30V N-Channel PowerTrench MOSFET

FDS7066N3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.35
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):23 A
最大漏极电流 (ID):23 A最大漏源导通电阻:0.0055 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS7066N3 数据手册

 浏览型号FDS7066N3的Datasheet PDF文件第2页浏览型号FDS7066N3的Datasheet PDF文件第3页浏览型号FDS7066N3的Datasheet PDF文件第4页浏览型号FDS7066N3的Datasheet PDF文件第5页浏览型号FDS7066N3的Datasheet PDF文件第6页 
May 2003  
FDS7066N3  
30V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS(ON) in a small package.  
23 A, 30 V  
RDS(ON) = 5.5 m@ VGS = 10 V  
RDS(ON) = 6.5 m@ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
High power and current handling capability  
Fast switching  
Synchronous rectifier  
DC/DC converter  
FLMP SO-8 package: Enhanced thermal  
performance in industry-standard package size  
Bottom-side  
Drain Contact  
5
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±16  
23  
60  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
3.0  
1.7  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
40  
0.5  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
12mm  
Quantity  
2500 units  
FDS7066N3  
FDS7066N3  
13’’  
FDS7066N3 Rev B1 (W)  
2002 Fairchild Semiconductor Corporation  

FDS7066N3 替代型号

型号 品牌 替代类型 描述 数据表
FDS6699S FAIRCHILD

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FDS6299S FAIRCHILD

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