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FDS7064A PDF预览

FDS7064A

更新时间: 2024-11-17 22:40:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 81K
描述
30V N-Channel PowerTrench MOSFET

FDS7064A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):19 A最大漏极电流 (ID):19 A
最大漏源导通电阻:0.0055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.9 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS7064A 数据手册

 浏览型号FDS7064A的Datasheet PDF文件第2页浏览型号FDS7064A的Datasheet PDF文件第3页浏览型号FDS7064A的Datasheet PDF文件第4页 
May 2000  
ADVANCE INFORMATION  
FDS7064A  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
“low side” synchronous rectifier operation, providing an  
extremely low RDS( ON) in a small package.  
·
·
19 A, 30 V  
RDS(ON) = 6.5 mW @ VGS = 4.5 V  
High performance trench technology for extremely  
low RDS(ON)  
·
·
·
High power and current handling capability  
Fast switching  
Applications  
·
·
Synchronous rectifier  
DC/DC converter  
Bottomlessä SO-8 package: Enhanced thermal  
performance in industry-standard package size  
Bottom-side  
D
Drain Contact  
S  
5
6
7
8
4
3
2
1
S  
S
S
Bottomless  
SO-8  
G
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±12  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
(Note 1a)  
19  
60  
3.9  
Power Dissipation for Single Operation  
PD  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
38  
1
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS7064A  
FDS7064A  
13’’  
12mm  
2500 units  
FDS7064A Rev A1(W)  
Ó 2000 Fairchild Semiconductor Corporation  

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