Datasheet > FDS7060N7

FDS7060N7

更新时间： 2024-11-17 22:40:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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描述
30V N-Channel PowerTrench MOSFET

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FDS7060N7 数据手册

May 2003

FDS7060N7



30V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

• 19 A, 30 V.

R_DS(ON)= 5 mΩ @ V_GS= 10 V

R_DS(ON)= 7 mΩ @ V_GS= 4.5 V

• High performance trench technology for extremely

low R_DS(ON)

Applications

• High power and current handling capability

• Fast switching, low gate charge (35nC typical)

• Synchronous rectifier

• DC/DC converter

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 1a)

3.0

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

0.5

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS7060N7

13’’

12mm

2500 units

FDS7060N7 Rev C1 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5 6 7

中文翻译

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FDS7060N7 替代型号

型号	品牌	替代类型	描述	数据表
FDS7064N7	FAIRCHILD	类似代替	30V N-Channel PowerTrench MOSFET

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FDS7064SN3	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET
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