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FDS6993_NL

更新时间: 2024-11-18 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管脉冲光电二极管
页数 文件大小 规格书
8页 160K
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FDS6993_NL 数据手册

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June 2003  
FDS6993  
Dual P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
·
Q1:  
P-Channel  
These P-Channel MOSFETs are made  
using FSC’s PowerTrenchÒ technology.  
They are packaged in a single SO-8 which is  
designed to allow two MOSFETs to operate  
independenly, each with it’s own heat sink.  
The combination of silicon and package  
technologies results in minimum board  
space and cost.  
–4.3A, –30V RDS(on) = 55mW @ VGS = –10V  
RDS(on) = 85mW @ VGS = –4.5V  
·
Q2:  
P-Channel  
–6.8A, –12V RDS(on) = 17mW @ VGS = –4.5V  
RDS(on) = 24mW @ VGS = –2.5V  
RDS(on) = 30mW @ VGS = –1.8V  
·
High power and handling capability in a widely  
used surface mount package  
D2  
5
6
7
8
4
3
2
1
D2  
D1  
Q2  
Q1  
D1  
G2  
SO-8  
S2  
G1  
S1  
Pin 1  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Q1  
Q2  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
–30  
±25  
–4.3  
–20  
–12  
±8  
V
V
A
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
–6.8  
–20  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
(Note 1a)  
(Note 1b)  
1.6  
1
0.9  
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
40  
RqJA  
°C/W  
°C/W  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6993  
FDS6993  
13”  
12mm  
2500 units  
FDS6993 Rev C (W)  
Ó2003 Fairchild Semiconductor Corporation  

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