Datasheet > FDS6990SL99Z

FDS6990SL99Z

更新时间： 2024-11-22 06:09:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	86K
描述
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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FDS6990SL99Z 数据手册

May 2001

FDS6990S

Dual 30V N-Channel PowerTrench^ÒSyncFET^™

General Description

Features

The FDS6990S is designed to replace a dual SO-8

MOSFET and two Schottky diodes in synchronous

DC:DC power supplies. This 30V MOSFET is designed

to maximize power conversion efficiency, providing a

low R_DS(ON)and low gate charge. Each MOSFET

includes integrated Schottky diodes using Fairchild’s

monolithic SyncFET technology. The performance of

the FDS6990S as the low-side switch in a synchronous

rectifier is similar to the performance of the FDS6990A

in parallel with a Schottky diode.

7.5A, 30 V.

R_DS(ON)= 22 mW @ V_GS= 10 V

R_DS(ON)= 30 mW @ V_GS= 4.5 V

Includes SyncFET Schottky diode

Low gate charge (11 nC typical)

High performance trench technology for extremely low

R_DS(ON)

Applications

High power and current handling capability

DC/DC converter

Motor drives

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±20

7.5

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.9

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6990S

13’’

12mm

2500 units

FDS6990S Rev B(W)

Ó 2001 Fairchild Semiconductor Corporation

12 3 4 5 6

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