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FDS6990 PDF预览

FDS6990

更新时间: 2024-11-11 22:20:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 88K
描述
Dual 30V N-Channel PowerTrench SyncFET

FDS6990 数据手册

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May 2001  
FDS6990S  
Dual 30V N-Channel PowerTrenchÒ SyncFET™  
General Description  
Features  
The FDS6990S is designed to replace a dual SO-8  
MOSFET and two Schottky diodes in synchronous  
DC:DC power supplies. This 30V MOSFET is designed  
to maximize power conversion efficiency, providing a  
low RDS(ON) and low gate charge. Each MOSFET  
includes integrated Schottky diodes using Fairchild’s  
monolithic SyncFET technology. The performance of  
the FDS6990S as the low-side switch in a synchronous  
rectifier is similar to the performance of the FDS6990A  
in parallel with a Schottky diode.  
·
7.5A, 30 V.  
RDS(ON) = 22 mW @ VGS = 10 V  
RDS(ON) = 30 mW @ VGS = 4.5 V  
·
·
·
Includes SyncFET Schottky diode  
Low gate charge (11 nC typical)  
High performance trench technology for extremely low  
RDS(ON)  
Applications  
·
High power and current handling capability  
·
·
DC/DC converter  
Motor drives  
D1  
5
6
7
8
4
3
2
1
D1  
Q1  
Q2  
D2  
D2  
G1  
SO-8  
S1  
G2  
S2  
O-
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
30  
VGSS  
ID  
Gate-Source Voltage  
V
A
±20  
7.5  
20  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
(Note 1a)  
(Note 1b)  
1.6  
1
0.9  
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6990S  
FDS6990S  
13’’  
12mm  
2500 units  
FDS6990S Rev B(W)  
Ó 2001 Fairchild Semiconductor Corporation  

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