Datasheet > FDP4020P

FDP4020P

更新时间： 2025-07-18 19:01:23

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安森美 - ONSEMI		/
页数	文件大小	规格书
5页	78K
描述
元器件封装:TO-220-3;

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数据手册

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FDP4020P 数据手册

September 2000

FDP4020P/FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description

Features

• -16 A, -20 V. R_DS(on)= 0.08 Ω @ V_GS= -4.5 V

R_DS(on)= 0.11 Ω @ V_GS= -2.5 V.

This P-Channel low threshold MOSFET has been

designed for use as a linear pass element for low voltage

outputs. In addition, the part may be used as a low voltage

load switch when switching outputs on or off for power

management.The part may also be used in conjunction

with DC-DC converters requiring P-Channel.

• Critical DC electrical parameters specified at elevated

temperature.

• High density cell design for extremely low R_DS(on)

• TO-220 and TO-263 (D PAK) package for both

through hole and surface mount applications.

• 175°C maximum junction temperature rating.

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

FDP4020P

FDB4020P

Symbol

V_DSS

Parameter

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

-20

V_GSS

I_D

-16

-48

P_D

Total Power Dissipation @ T_C= 25 C

37.5

0.25

Derate above 25 C

W/ C

T_J, T_STG

Operating and Storage Junction Temperature Range

-65 to +175

Thermal Characteristics

C/W

Thermal Resistance, Junction-to- Case

θ^JC

Thermal Resistance, Junction-to- Ambient

(Note 1)

62.5

θ^JA

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDP4020P

13’’

12mm

2500 units

2000 Fairchild Semiconductor International

FDP4020P Rev. B

12 3 4 5

中文翻译

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