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FDP3652 PDF预览

FDP3652

更新时间: 2024-11-08 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
11页 266K
描述
N-Channel PowerTrench MOSFET 100V, 61A, 16mз

FDP3652 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.3
Is Samacsys:N雪崩能效等级(Eas):182 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):9 A
最大漏极电流 (ID):9 A最大漏源导通电阻:0.016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP3652 数据手册

 浏览型号FDP3652的Datasheet PDF文件第2页浏览型号FDP3652的Datasheet PDF文件第3页浏览型号FDP3652的Datasheet PDF文件第4页浏览型号FDP3652的Datasheet PDF文件第5页浏览型号FDP3652的Datasheet PDF文件第6页浏览型号FDP3652的Datasheet PDF文件第7页 
October 2002  
FDB3652 / FDP3652 / FDI3652  
N-Channel PowerTrench® MOSFET  
100V, 61A, 16m  
Features  
Applications  
rDS(ON) = 14m(Typ.), VGS = 10V, ID = 61A  
Qg(tot) = 41nC (Typ.), VGS = 10V  
Low Miller Charge  
DC/DC Converters and Off-line UPS  
Distributed Power Architectures and VRMs  
Primary Switch for 24V and 48V Systems  
High Voltage Synchronous Rectifier  
Direct Injection / Diesel Injection Systems  
42V Automotive Load Control  
Low QRR Body Diode  
UIS Capability (Single Pulse and Repetitive Pulse)  
Qualified to AEC Q101  
Electronic Valve Train Systems  
Formerly developmental type 82769  
SOURCE  
DRAIN  
DRAIN  
(FLANGE)  
D
S
GATE  
GATE  
SOURCE  
DRAIN  
GATE  
G
SOURCE  
TO-263AB  
DRAIN  
TO-220AB  
FDP SERIES  
TO-262AA  
FDI SERIES  
(FLANGE)  
DRAIN  
FDB SERIES  
(FLANGE)  
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
100  
±20  
V
V
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 10V)  
Continuous (Tamb = 25oC, VGS = 10V) with RθJA = 43oC/W)  
Pulsed  
61  
A
ID  
43  
9
A
A
Figure 4  
182  
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
mJ  
W
150  
PD  
Derate above 25oC  
1.0  
W/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-220, TO-263, TO-262  
1.0  
62  
43  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2)  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a  
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.  
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems  
certification.  
©2002 Fairchild Semiconductor Corporation  
FDB3652 / FDP3652 / FDI3652 Rev. B  

FDP3652 替代型号

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