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FDP39N20 PDF预览

FDP39N20

更新时间: 2024-09-16 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 626K
描述
功率 MOSFET,N 沟道,UniFETTM,200 V,39 A,66 mΩ,TO-220

FDP39N20 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:1.49Is Samacsys:N
其他特性:FAST SWITCHING雪崩能效等级(Eas):860 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):39 A最大漏极电流 (ID):39 A
最大漏源导通电阻:0.066 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):251 W最大脉冲漏极电流 (IDM):156 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDP39N20 数据手册

 浏览型号FDP39N20的Datasheet PDF文件第2页浏览型号FDP39N20的Datasheet PDF文件第3页浏览型号FDP39N20的Datasheet PDF文件第4页浏览型号FDP39N20的Datasheet PDF文件第5页浏览型号FDP39N20的Datasheet PDF文件第6页浏览型号FDP39N20的Datasheet PDF文件第7页 
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FDP39N20 替代型号

型号 品牌 替代类型 描述 数据表
SSP45N20B_FP001 FAIRCHILD

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